US 12,114,412 B2
Shock wave visualization for extreme ultraviolet plasma optimization
Yen-Shuo Su, Hsinchu (TW); Jen-Hao Yeh, Hsinchu (TW); Jhan-Hong Yeh, Hsinchu (TW); Ting-Ya Cheng, Hsinchu (TW); Henry Yee Shian Tong, Hsinchu (TW); Chun-Lin Chang, Hsinchu (TW); Han-Lung Chang, Hsinchu (TW); Li-Jui Chen, Hsinchu (TW); and Po-Chung Cheng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 31, 2023, as Appl. No. 18/228,206.
Application 18/228,206 is a continuation of application No. 17/874,278, filed on Jul. 26, 2022, granted, now 11,800,626.
Application 17/874,278 is a continuation of application No. 16/655,116, filed on Oct. 16, 2019, granted, now 11,452,197, issued on Sep. 20, 2022.
Claims priority of provisional application 62/752,289, filed on Oct. 29, 2018.
Prior Publication US 2023/0380044 A1, Nov. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H05G 2/00 (2006.01); G01V 8/12 (2006.01)
CPC H05G 2/008 (2013.01) [G01V 8/12 (2013.01); H05G 2/005 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
generating EUV radiation and a plasma in an extreme ultraviolet (EUV) light source apparatus of an EUV lithography tool;
detecting a shock wave generated by the plasma;
irradiating the shock wave with a non-ionizing light from a radiation source of a shock wave illumination module;
capturing one or more images of the shock wave by an image sensor of a shock wave detection module; and
adjusting one or more parameters of one or both of a droplet generator or a source of a laser beam of the EUV light source apparatus based on the detected shock wave.