CPC H03H 3/013 (2013.01) [H03H 3/02 (2013.01); H03H 2003/022 (2013.01); H03H 2003/023 (2013.01); H03H 2003/027 (2013.01); H03H 9/02102 (2013.01); H03H 9/0547 (2013.01); H03H 9/1021 (2013.01); H03H 9/19 (2013.01)] | 2 Claims |
1. A method of manufacturing a quartz crystal element, the method comprising:
preparing a quartz crystal wafer which has a predetermined cutting angle with respect to a crystal axis of a quartz crystal, and which has a first surface and a second surface having an obverse-reverse relationship;
forming a first resist film on the first surface, the first resist film having a first tilted part tilted with respect to the first surface, and being dry-etched together with the quartz crystal;
forming a first tilted surface tilted with respect to the first surface by dry-etching the quartz crystal wafer from the first surface;
forming a second resist film on the second surface, the second resist film having a second tilted part tilted with respect to the second surface, and being dry-etched together with the quartz crystal; and
forming a second tilted surface tilted with respect to the second surface by dry-etching the quartz crystal wafer from the second surface,
wherein
the quartz crystal element which is provided with the first tilted surface and the second tilted surface, and which has a cutting angle different from the predetermined cutting angle is formed,
the quartz crystal wafer has a plurality of element areas where the quartz crystal elements are respectively formed, and
the quartz crystal element formed from at least one of the element areas is different in thickness from the quartz crystal element formed from another of the element areas.
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