US 12,113,490 B2
Group III nitride-based radio frequency transistor amplifiers having source, gate and/or drain conductive vias
Basim Noori, San Jose, CA (US); Marvin Marbell, Morgan Hill, CA (US); Qianli Mu, San Jose, CA (US); Kwangmo Chris Lim, San Jose, CA (US); Michael E. Watts, Scottsdale, AZ (US); Mario Bokatius, Chandler, AZ (US); and Jangheon Kim, Chandler, AZ (US)
Assigned to MACOM Technology Solutions Holdings, Inc., Lowell, MA (US)
Filed by MACOM Technology Solutions Holdings, Inc., Lowell, MA (US)
Filed on Nov. 22, 2023, as Appl. No. 18/517,065.
Application 18/517,065 is a continuation of application No. 17/215,456, filed on Mar. 29, 2021, granted, now 11,863,130.
Claims priority of provisional application 63/004,985, filed on Apr. 3, 2020.
Prior Publication US 2024/0088838 A1, Mar. 14, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H03F 3/187 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 29/778 (2006.01); H03F 1/56 (2006.01); H03F 3/193 (2006.01)
CPC H03F 1/565 (2013.01) [H01L 23/481 (2013.01); H01L 23/49822 (2013.01); H01L 24/08 (2013.01); H01L 29/778 (2013.01); H03F 3/193 (2013.01); H01L 2224/08225 (2013.01); H03F 2200/222 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A radio frequency (“RF”) transistor amplifier, comprising:
an interconnection structure having at least first and second conductive structures on an upper surface thereof; and
a Group III nitride-based RF transistor amplifier die mounted on the upper surface of the interconnection structure, the Group III nitride-based RF transistor amplifier die including a semiconductor layer structure, at least one conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the at least one conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure,
wherein a first end of the additional conductive via is connected to the first conductive structure through a contact that is interposed between the interconnection structure and the Group III nitride-based RF transistor amplifier die,
wherein the additional conductive via is at least one of a conductive gate via and a conductive drain via.