US 12,113,484 B2
High voltage stacked transistor amplifier
Wayne Mack Struble, Franklin, MA (US); Shamit Som, Chelmsford, MA (US); Kohei Fujii, San Jose, CA (US); and Walter Nagy, Lowell, MA (US)
Assigned to MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC., Lowell, MA (US)
Filed by MACOM Technology Solutions Holdings, Inc., Lowell, MA (US)
Filed on Mar. 31, 2021, as Appl. No. 17/219,118.
Prior Publication US 2022/0321062 A1, Oct. 6, 2022
Int. Cl. H03F 1/22 (2006.01); H03F 3/195 (2006.01)
CPC H03F 1/223 (2013.01) [H03F 3/195 (2013.01); H03F 2200/451 (2013.01)] 38 Claims
OG exemplary drawing
 
1. An amplifier, comprising:
an amplifier cell, the amplifier cell comprising a common source transistor and a common gate transistor in a cascode arrangement, at least one of the common source transistor and the common gate transistor comprising a field plate;
a second amplifier cell, the second amplifier cell comprising a second common source transistor and a second common gate transistor in a cascode arrangement; and
a biasing network coupled at a source of the common gate transistor of the amplifier cell and comprising a bias node, the bias node being coupled to the gate of the common gate transistor of the amplifier cell and to the gate of the second common gate transistor of the second amplifier cell.