US 12,113,453 B2
Antenna based method for harvesting radio frequency energy
Munir A. Al-Absi, Dhahran (SA)
Assigned to KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS, Dhahran (SA)
Filed by KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS, Dhahran (SA)
Filed on Mar. 26, 2024, as Appl. No. 18/616,391.
Application 18/616,391 is a continuation of application No. 17/983,578, filed on Nov. 9, 2022, granted, now 11,990,847.
Claims priority of provisional application 63/390,426, filed on Jul. 19, 2022.
Prior Publication US 2024/0275299 A1, Aug. 15, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H02M 7/219 (2006.01); H02J 50/00 (2016.01); H02J 50/20 (2016.01)
CPC H02M 7/219 (2013.01) [H02J 50/001 (2020.01); H02J 50/20 (2016.02)] 6 Claims
OG exemplary drawing
 
1. An antenna based method for harvesting radio frequency (RF) energy, comprising:
receiving, by an energy harvesting antenna, an electromagnetic radiation;
generating, by the energy harvesting antenna, an oscillating current, wherein the oscillating current is an RF+ positive current during a first half cycle and is an RF− negative current during a second half cycle and wherein the harvesting antenna is selected from the group consisting of a copper wire, a copper wire coil, a silver wire coil, a ferrite coil and a combination thereof;
connecting a first energy harvesting capacitor C1 to the RF+ positive current;
connecting a second energy harvesting capacitor C2 to the RF− negative current;
connecting a cross coupled CMOS circuit to the first energy harvesting capacitor C1 and the second energy harvesting capacitor C2, wherein connecting the cross coupled CMOS circuit includes:
connecting a first stage voltage output terminal to a first output capacitor Cs1 and connecting a second terminal of Cs1 to a ground;
connecting a first P-channel metal oxide semiconductor (PMOS) transistor MP1 at its drain to the first energy harvesting capacitor C1, at its source to the first stage voltage output terminal and at its gate to the second energy harvesting capacitor C2;
connecting a first N-channel metal oxide semiconductor (NMOS) transistor MN1 at its drain to the first energy harvesting capacitor C1, at its source to a ground terminal and at its gate to the second energy harvesting capacitor C2;
connecting a second PMOS transistor MP2 at its drain to the second energy harvesting capacitor C2, at its source to the first stage voltage output terminal and at its gate to the first energy harvesting capacitor C1;
connecting a second NMOS transistor MN2 connected at its drain to the second energy harvesting capacitor C2, at its source to the ground and at its gate to the first energy harvesting capacitor C1;
connecting a first body biasing capacitor Cb1 between the RF− negative current and a body contact of the first NMOS transistor MN1;
connecting a second body biasing capacitor Cb2 between the RF− negative current and a body contact of the first PMOS transistor MP1;
connecting a third body biasing capacitor Cb3 between the RF+ positive current and a body contact of the second NMOS transistor MN2; and
connecting a fourth body biasing capacitor Cb4 between the RF+ positive current and a body contact of the second PMOS transistor MP2.