US 12,113,333 B2
Surface emitting laser element and manufacturing method of the same
Susumu Noda, Kyoto (JP); Yoshinori Tanaka, Kyoto (JP); Menaka De Zoysa, Kyoto (JP); Kenji Ishizaki, Kyoto (JP); Tomoaki Koizumi, Tokyo (JP); and Kei Emoto, Tokyo (JP)
Assigned to KYOTO UNIVERSITY, Kyoto (JP); and STANLEY ELECTRIC CO., LTD., Tokyo (JP)
Appl. No. 17/272,385
Filed by KYOTO UNIVERSITY, Kyoto (JP); and STANLEY ELECTRIC CO., LTD., Meguro-ku (JP)
PCT Filed Aug. 29, 2019, PCT No. PCT/JP2019/033938
§ 371(c)(1), (2) Date Mar. 1, 2021,
PCT Pub. No. WO2020/050130, PCT Pub. Date Mar. 12, 2020.
Claims priority of application No. 2018-164927 (JP), filed on Sep. 3, 2018.
Prior Publication US 2021/0328406 A1, Oct. 21, 2021
Int. Cl. H01S 5/00 (2006.01); H01S 5/11 (2021.01); H01S 5/183 (2006.01); H01S 5/185 (2021.01); H01S 5/343 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01S 5/042 (2006.01); H01S 5/20 (2006.01)
CPC H01S 5/11 (2021.01) [H01S 5/183 (2013.01); H01S 5/185 (2021.01); H01S 5/34333 (2013.01); C30B 25/18 (2013.01); C30B 29/403 (2013.01); H01S 5/04254 (2019.08); H01S 5/2009 (2013.01); H01S 2304/04 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A surface emitting laser element formed of a group III nitride semiconductor, comprising:
a first clad layer of a first conductivity type;
a first guide layer of the first conductivity type having a photonic crystal layer formed on the first clad layer including voids disposed having two-dimensional periodicity in a surface parallel to the layer and a first embedding layer formed on the photonic crystal layer wherein the first embedding layer closes the voids;
a second embedding layer formed on the first embedding layer by crystal growth;
an active layer formed on the second embedding layer;
a second guide layer formed on the active layer; and
a second clad layer of a second conductivity type formed on the second guide layer, the second conductivity type being a conductivity type opposite to the first conductivity type,
wherein the first embedding layer has a surface including pits disposed at surface positions corresponding to the voids.