US 12,113,150 B2
Structure of micro light-emitting device and method of transferring micro light-emitting device
In Hwan Lee, Seoul (KR); and Gyu Cheol Kim, Seoul (KR)
Assigned to Korea University Research and Business Foundation, Seoul (KR)
Filed by Korea University Research and Business Foundation, Seoul (KR)
Filed on Nov. 4, 2021, as Appl. No. 17/518,771.
Claims priority of application No. 10-2020-0147435 (KR), filed on Nov. 6, 2020.
Prior Publication US 2022/0149236 A1, May 12, 2022
Int. Cl. H01L 33/24 (2010.01); H01L 23/00 (2006.01); H01L 27/15 (2006.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01); H01L 25/065 (2023.01); H01L 25/075 (2006.01); H01L 33/00 (2010.01); H01L 33/44 (2010.01)
CPC H01L 33/24 (2013.01) [H01L 24/95 (2013.01); H01L 27/15 (2013.01); H01L 33/38 (2013.01); H01L 33/62 (2013.01); H01L 25/0655 (2013.01); H01L 25/0753 (2013.01); H01L 33/0095 (2013.01); H01L 33/44 (2013.01); H01L 2224/95101 (2013.01); H01L 2224/95136 (2013.01); H01L 2224/95144 (2013.01); H01L 2924/10157 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A three-dimensional shaped micro light-emitting device comprising:
a structure including an inclined side surface, p-contact, p-GaN, n-contact, n-GaN, a substrate, and a wind resistance structure,
wherein the inclined side surface has a circular cone shape or a pyramid shape,
wherein the structure including the inclined side surface has magnetism and protrudes from the p-GaN,
wherein the p-contact and the n-contact form a first electrode and a second electrode, respectively,
wherein the p-contact is disposed to contact the structure including the inclined side surface,
wherein the n-contact is disposed on a mesa portion,
wherein the inclined side surface, the p-contact, the p-GaN, the n-contact, and the n-GaN are disposed on a first surface of the substrate, and the wind resistance structure is disposed on a second surface of the substrate opposite to the first surface of the substrate.