US 12,113,148 B2
Semiconductor nanoparticle, method for manufacturing same, and light emitting device
Tsukasa Torimoto, Nagoya (JP); Tatsuya Kameyama, Nagoya (JP); Yuki Mori, Nagoya (JP); Hiroki Yamauchi, Nagoya (JP); Susumu Kuwabata, Ibaraki (JP); Taro Uematsu, Suita (JP); and Daisuke Oyamatsu, Tokushima (JP)
Assigned to National University Corporation Tokai National Higher Education and Research System, Nagoya (JP); OSAKA UNIVERSITY, Suita (JP); and NICHIA CORPORATION, Anan (JP)
Filed by National University Corporation Tokai National Higher Education and Research System, Nagoya (JP); OSAKA UNIVERSITY, Suita (JP); and NICHIA CORPORATION, Anan (JP)
Filed on Jul. 25, 2023, as Appl. No. 18/358,534.
Application 18/358,534 is a division of application No. 16/815,359, filed on Mar. 11, 2020, granted, now 11,757,064.
Claims priority of application No. 2019-044832 (JP), filed on Mar. 12, 2019; and application No. 2020-039194 (JP), filed on Mar. 6, 2020.
Prior Publication US 2024/0063334 A1, Feb. 22, 2024
Int. Cl. H01L 33/00 (2010.01); B82Y 15/00 (2011.01); B82Y 40/00 (2011.01); H01L 33/06 (2010.01)
CPC H01L 33/06 (2013.01) [B82Y 15/00 (2013.01); B82Y 40/00 (2013.01); H01L 33/0095 (2013.01); H01L 2933/0033 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor nanoparticle comprising:
silver (Ag); lithium; at least one of indium (In) and gallium (Ga); and sulfur (S), wherein
a total content of silver (Ag) and lithium is 10 mol % to 30 mol %, a total content of indium (In) and gallium (Ga) is 15 mol % to 35 mol %, and a content of sulfur (S) is 35 mol % to 55 mol %, wherein
the semiconductor nanoparticle irradiated with light having a wavelength in a range of 200 nm or more and less than 500 nm emits light having an emission peak wavelength in a range of 500 nm to 650 nm and a half-value width of 250 meV or less in an emission spectrum.