US 12,113,141 B2
Optical-sensing apparatus
Yun-Chung Na, San Jose, CA (US); Chien-Yu Chen, Zhubei (TW); and Yen-Ju Lin, Zhubei (TW)
Assigned to Artilux, Inc., Menlo Park, CA (US)
Filed by ARTILUX, INC., Menlo Park, CA (US)
Filed on May 12, 2022, as Appl. No. 17/743,005.
Claims priority of provisional application 63/190,827, filed on May 20, 2021.
Prior Publication US 2022/0376125 A1, Nov. 24, 2022
Int. Cl. H01L 31/0352 (2006.01); H01L 27/144 (2006.01); H01L 31/107 (2006.01); H01L 31/112 (2006.01)
CPC H01L 31/035272 (2013.01) [H01L 27/1446 (2013.01); H01L 31/107 (2013.01); H01L 31/112 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An optical sensing apparatus comprising:
a substrate composed of a first material and having a first surface; and
one or more pixels supported by the substrate, wherein each of the one or more pixels comprises:
an absorption region supported by the substrate and composed of a second material, the absorption region configured to receive an optical signal and generate photo-carriers in response to receiving the optical signal;
a field control region formed in the substrate, wherein the field control region is doped with a first dopant of a first conductivity type;
a first contact region formed in the substrate for collecting a first type of the photo-carriers, wherein the first contact region is electrically coupled to the field control region and is doped with a second dopant of the first conductivity type;
a second contact region electrically coupled to the absorption region for collecting a second type of the photo-carriers, wherein the second contact region is doped with a first third dopant of a second conductivity type; and
a carrier confining region formed in the substrate and between the absorption region and the field control region, wherein the carrier confining region comprises a first barrier region and a channel region, wherein the first barrier region is doped with a fourth dopant of the second conductivity type and has a first peak doping concentration, and wherein the channel region is intrinsic or doped with a fifth dopant of the second conductivity type and has a second peak doping concentration lower than the first peak doping concentration of the first barrier region,
wherein the absorption region is doped with a sixth dopant of the second conductivity type,
wherein the absorption region, the field control region, and the carrier confining region are formed along the first surface of the substrate, and
wherein the channel region is formed between the first barrier region and the first surface of the substrate.