US 12,113,138 B2
Semiconductor devices with single-photon avalanche diodes and light scattering structures
Swarnal Borthakur, Boise, ID (US); Marc Allen Sulfridge, Boise, ID (US); and Andrew Eugene Perkins, Boise, ID (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed on Apr. 3, 2023, as Appl. No. 18/194,714.
Application 18/194,714 is a continuation of application No. 16/948,105, filed on Sep. 3, 2020, granted, now 11,652,176.
Claims priority of provisional application 62/981,902, filed on Feb. 26, 2020.
Claims priority of provisional application 62/943,475, filed on Dec. 4, 2019.
Prior Publication US 2023/0253513 A1, Aug. 10, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 31/02 (2006.01); G02B 3/06 (2006.01); H01L 27/146 (2006.01); H01L 31/0232 (2014.01); H01L 31/055 (2014.01); H01L 31/107 (2006.01); H04N 25/63 (2023.01)
CPC H01L 31/02027 (2013.01) [G02B 3/06 (2013.01); H01L 27/14605 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14629 (2013.01); H01L 27/1463 (2013.01); H01L 27/14643 (2013.01); H01L 27/14649 (2013.01); H01L 31/02327 (2013.01); H01L 31/055 (2013.01); H01L 31/107 (2013.01); H01L 27/1464 (2013.01); H04N 25/63 (2023.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a photosensitive area formed in the substrate;
a microlens formed over the photosensitive area; and
a plurality of light scattering structures in the substrate over the photosensitive area, wherein, in a first portion of the substrate, there is a first non-zero number of the light scattering structures per unit area, wherein, in a second portion of the substrate, there is a second non-zero number of the light scattering structures per the unit area, wherein the second non-zero number is greater than the first non-zero number, and wherein the second portion of the substrate forms a ring around the first portion of the substrate.