US 12,113,137 B2
SPAD-type photodiode
François Ayel, Grenoble (FR); Olivier Saxod, Grenoble (FR); and Norbert Moussy, Grenoble (FR)
Assigned to Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris (FR)
Filed by Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris (FR)
Filed on Sep. 23, 2021, as Appl. No. 17/483,390.
Claims priority of application No. 2009721 (FR), filed on Sep. 24, 2020.
Prior Publication US 2022/0093807 A1, Mar. 24, 2022
Int. Cl. H01L 31/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/0352 (2006.01); H01L 31/107 (2006.01)
CPC H01L 31/02027 (2013.01) [H01L 31/022408 (2013.01); H01L 31/0352 (2013.01); H01L 31/107 (2013.01)] 12 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a SPAD-type photodiode comprising:
a depletion area, in which a photogenerated electric charge can be injected to trigger an avalanche of the SPAD-type photodiode, in a first portion of a semiconductor substrate of a first conductivity type;
a gate electrically insulated from the substrate, extending into the substrate from an upper surface of the substrate down to a depth smaller than the thickness of the substrate, and separating the first portion of the substrate from a second portion; and
a first region of the second conductivity type extending from the upper surface of the substrate into the second portion,
wherein the second portion of the substrate does not have a depletion area in which a photogenerated electric charge can be injected to trigger an avalanche of the SPAD-type photodiode.