| CPC H01L 29/788 (2013.01) [H01L 29/0649 (2013.01); H01L 29/42324 (2013.01); H10B 41/00 (2023.02)] | 20 Claims |
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1. A method, comprising:
forming a first conductive structure, having a first curved side surface, on a substrate;
depositing a dielectric structure on the first conductive structure; and
forming a second conductive structure, having a second curved side surface, on an isolation structure in the substrate,
wherein the dielectric structure is disposed between the first curved side surface and the second curved side surface.
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