US 12,113,127 B2
GaN-based high electron mobility transistors and fabrication method thereof
Kuang-Po Hsueh, Nanjing (CN)
Assigned to Nanjing Greenchip Semiconductor Co., Ltd., Nanjing (CN)
Filed by Nanjing Greenchip Semiconductor Co., Ltd., Nanjing (CN)
Filed on Apr. 13, 2022, as Appl. No. 17/719,393.
Claims priority of application No. 202210155060.5 (CN), filed on Feb. 21, 2022.
Prior Publication US 2023/0268431 A1, Aug. 24, 2023
Int. Cl. H01L 29/778 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7786 (2013.01) [H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A Gallium Nitride (GaN)-based high electron mobility transistor (HEMT) comprising:
a substrate;
from bottom to top, a n-type Gallium Nitride (GaN) layer, an Aluminum Gallium Nitride (AlGaN) layer and a p-type Gallium Nitride (GaN) layer been formed on one side of said substrate, wherein said n-type GaN layer is used to generate a two-dimensional electron gas therein and used as a channel layer, said p-type GaN layer and said n-type GaN layer form a pn junction to deplete said two-dimensional electron gas in said channel layer;
a backside electrode been formed on other side of said substrate;
a source electrode been formed on said AlGaN layer and making ohmic contact with said AlGaN layer;
a drain electrode been formed on said AlGaN layer not overlapping said source electrode and making ohmic contact with said AlGaN layer; and
a gate electrode been formed on said p-type GaN layer not overlapping said source electrode and said drain electrode;
a protective layer been formed over said AlGaN layer, said source electrode, said drain electrode and said gate electrode;
a plurality of vias been formed in said protective layer to respectively connect said source electrode, said drain electrode and said gate electrode to outside of said protective layer through metal connection; and
a contact via been formed between said outside of said protective layer and said backside electrode, and penetrating through said protective layer, said AlGaN layer, said n-type GaN layer and said substrate to electrically connect one or more electrodes of said source electrode, said drain electrode and said gate electrode to said backside electrode through metal contact.