| CPC H01L 29/66969 (2013.01) [H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02595 (2013.01); H01L 21/02667 (2013.01); H01L 22/14 (2013.01); H01L 27/1225 (2013.01); H01L 29/04 (2013.01); H01L 29/66742 (2013.01); H01L 29/78606 (2013.01); H01L 29/7869 (2013.01)] | 4 Claims |
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1. A semiconductor device comprising:
a pixel over a substrate; and
a driver circuit over the substrate, the driver circuit electrically connected to the pixel through a scan line,
wherein the pixel comprises a first transistor and a light-emitting element electrically connected to the first transistor,
wherein the driver circuit comprises a second transistor,
wherein each of the first transistor and the second transistor comprises:
a source electrode and a drain electrode over the substrate;
an oxide semiconductor layer over the source electrode and the drain electrode;
a first gate electrode overlapping the oxide semiconductor layer; and
a gate insulating layer between the oxide semiconductor layer and the first gate electrode,
wherein the first transistor has a single-gate structure,
wherein the second transistor further comprises a second gate electrode overlapping the oxide semiconductor layer of the second transistor,
wherein the oxide semiconductor layer of the second transistor is positioned between the first gate electrode of the second transistor and the second gate electrode of the second transistor, and
wherein the first gate electrode of the second transistor and the second gate electrode of the second transistor are at the same potential.
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