US 12,113,110 B2
Nitride semiconductor device with field effect gate
Woochul Jeon, Suwon-si (KR); Jongseob Kim, Seoul (KR); Jaejoon Oh, Seongnam-si (KR); and Younghwan Park, Seongnam-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Dec. 3, 2021, as Appl. No. 17/541,735.
Claims priority of application No. 10-2021-0087402 (KR), filed on Jul. 2, 2021.
Prior Publication US 2023/0006047 A1, Jan. 5, 2023
Int. Cl. H01L 29/423 (2006.01); H01L 27/098 (2006.01); H01L 29/20 (2006.01); H01L 29/808 (2006.01)
CPC H01L 29/42316 (2013.01) [H01L 27/098 (2013.01); H01L 29/808 (2013.01); H01L 29/2003 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A nitride semiconductor device comprising:
a high-resistance material layer including a Group III-V compound semiconductor;
a first channel control layer on the high-resistance material layer and including a Group III-V compound semiconductor of a first conductivity type;
a channel layer on the first channel control layer and including a nitride semiconductor of a second conductivity type opposite to the first conductivity type; and
a gate electrode surrounding the first channel control layer and the channel layer, the gate electrode having a contact of an ohmic contact type with the first channel control layer.