a fin-type active region extending along a first horizontal direction on a substrate;

a plurality of gate structures each comprising a gate line extending along a second horizontal direction crossing the first horizontal direction on the fin-type active region and insulation spacers on sidewalls of the gate line;

a source/drain contact between a first gate structure and a second gate structure, which are among the gate structures and are adjacent to each other, and having opposing sides that are asymmetric in the first horizontal direction; and

an insulation liner on sidewalls of the source/drain contact,

wherein the source/drain contact comprises a lower contact portion facing the first gate structure and the second gate structure in the first horizontal direction and an upper contact portion that is integral to the lower contact portion, the upper contact portion comprises a horizontal extension, which extends on an upper corner of the first gate structure adjacent to the source/drain contact and overlaps at least a portion of the first gate structure in a vertical direction,

wherein the insulation liner comprises a first local region that electrically separates the upper corner of the first gate structure and the horizontal extension of the source/drain contact, and a second local region that is farther from the substrate than the first local region, and

wherein a thickness of the first local region is greater than that of the second local region.