| CPC H01L 29/0623 (2013.01) [H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/7816 (2013.01)] | 15 Claims |
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1. A semiconductor device, comprising:
a power device; and
a guard ring structure which is disposed to surround the power device,
wherein the power device comprises:
a buried layer of a first conductivity type, and a buried layer of a second conductivity type, each layer disposed within a substrate;
a body region of the first conductivity type and a drift region of the second conductivity type which are disposed on the buried layer of the first conductivity type;
a gate electrode, a source electrode, and a drain electrode which are disposed on the body region of the first conductivity type and the drift region of the second conductivity type, and
a second conductivity type deep well region disposed between the buried layer of the second conductivity type and the guard ring structure,
wherein the guard ring structure is disposed on the second conductivity type deep well region,
wherein the guard ring structure comprises:
a first guard ring of the second conductivity type disposed adjacent to the power device;
a second guard ring of the first conductivity type disposed adjacent to the first guard ring; and
a third guard ring of the second conductivity type disposed adjacent to the second guard ring, and
wherein the buried layer of the second conductivity type is disposed to extend to the guard ring structure.
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