US 12,113,097 B2
Ferroelectric capacitor integrated with logic
Gaurav Thareja, Santa Clara, CA (US); Sasikanth Manipatruni, Portland, OR (US); Rajeev Kumar Dokania, Beaverton, OR (US); Ramamoorthy Ramesh, Moraga, CA (US); and Amrita Mathuriya, Portland, OR (US)
Assigned to Kepler Computing Inc., San Francisco, CA (US)
Filed by Kepler Computing Inc., San Francisco, CA (US)
Filed on Nov. 16, 2022, as Appl. No. 18/056,240.
Application 18/056,240 is a continuation of application No. 16/795,404, filed on Feb. 19, 2020, granted, now 11,522,044.
Application 16/795,404 is a continuation of application No. 16/729,267, filed on Dec. 27, 2019, granted, now 11,430,861, issued on Aug. 30, 2022.
Prior Publication US 2023/0077581 A1, Mar. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/22 (2006.01); H01L 49/02 (2006.01); H10B 53/00 (2023.01)
CPC H01L 28/56 (2013.01) [G11C 11/221 (2013.01); H01L 28/75 (2013.01); H10B 53/00 (2023.02)] 23 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a first electrode comprising a first conductive material;
a first structure comprising a non-linear polar material, the first structure adjacent to the first electrode, wherein the first electrode is laterally on the first structure;
a second electrode comprising a second conductive material, the second electrode adjacent to the first structure, wherein the first structure is laterally on the second electrode;
a dielectric which abuts to sidewalls of the first electrode, wherein the dielectric is directly adjacent to sidewalls of the first structure, and wherein the dielectric does not abut to sidewalls of the second electrode; and
a cap or a helmet, wherein the cap or the helmet circumscribes the dielectric, and wherein the cap or the helmet does not extend below the first structure.