US 12,113,092 B2
Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
Vladimir Odnoblyudov, Danville, CA (US); and Martin F. Schubert, Sunnyvale, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 8, 2023, as Appl. No. 18/313,638.
Application 15/187,022 is a division of application No. 14/460,297, filed on Aug. 14, 2014, granted, now 9,373,661, issued on Jun. 21, 2016.
Application 14/460,297 is a division of application No. 13/223,098, filed on Aug. 31, 2011, granted, now 8,809,897, issued on Aug. 19, 2014.
Application 18/313,638 is a continuation of application No. 17/539,528, filed on Dec. 1, 2021, granted, now 11,688,758.
Application 17/539,528 is a continuation of application No. 16/800,287, filed on Feb. 25, 2020, granted, now 11,195,876, issued on Dec. 7, 2021.
Application 16/800,287 is a continuation of application No. 16/440,720, filed on Jun. 13, 2019, granted, now 10,615,221, issued on Apr. 7, 2020.
Application 16/440,720 is a continuation of application No. 15/976,805, filed on May 10, 2018, granted, now 10,361,245, issued on Jul. 23, 2019.
Application 15/976,805 is a continuation of application No. 15/187,022, filed on Jun. 20, 2016, granted, now 9,978,807, issued on May 22, 2018.
Prior Publication US 2023/0275113 A1, Aug. 31, 2023
Int. Cl. H01L 27/15 (2006.01); H01L 23/60 (2006.01); H01L 25/16 (2023.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01)
CPC H01L 27/15 (2013.01) [H01L 23/60 (2013.01); H01L 33/0075 (2013.01); H01L 33/0093 (2020.05); H01L 33/382 (2013.01); H01L 33/405 (2013.01); H01L 25/167 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/0016 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A solid state transducer device, comprising:
a solid state emitter (SSE) including a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers; and
a plurality of electrostatic discharge (ESD) junctions arranged in parallel and/or series between a first shared contact and a second shared contact, the first and second shared contacts being the only externally accessible active electrical contacts for both the SSE and the plurality of ESD junctions.