US 12,113,090 B2
Bond pad structure for bonding improvement
Chin-Wei Liang, Zhubei (TW); Sheng-Chau Chen, Tainan (TW); Hsun-Chung Kuang, Hsinchu (TW); and Sheng-Chan Li, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Aug. 4, 2023, as Appl. No. 18/365,561.
Application 18/365,561 is a division of application No. 17/097,360, filed on Nov. 13, 2020, granted, now 11,869,916.
Prior Publication US 2023/0378225 A1, Nov. 23, 2023
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14636 (2013.01) [H01L 27/1462 (2013.01); H01L 27/14685 (2013.01); H01L 27/14698 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a semiconductor substrate having a lower side and an upper side;
an interconnect structure disposed beneath the lower side of the semiconductor substrate;
a carrier substrate bonded to the interconnect structure such that the interconnect structure is sandwiched between the carrier substrate and the lower side of the semiconductor substrate;
a radiation sensor disposed in the lower side of the semiconductor substrate;
a conductive bond pad coupled to the radiation sensor through a conductive feature in the interconnect structure;
a base oxide structure including: a base portion extending over the conductive bond pad, and a collar portion at an outer edge of the base portion of the base oxide structure, the collar portion of the base oxide structure extending upwardly along an inner sidewall of the semiconductor substrate;
a nitride structure including a base portion extending along an upper surface of the base portion of the base oxide structure and including a collar portion at an outer edge of the base portion of the nitride structure, the collar portion of the nitride structure lining inner sidewalls of the collar portion of the base oxide structure; and
a capping oxide structure disposed over an upper surface of the base portion of the nitride structure and lining inner sidewalls of the collar portion of the nitride structure, wherein an upper surface of the collar portion of the base oxide structure is located at a height over the interconnect structure and is co-planar with an upper surface of the collar portion of the nitride structure and is coplanar with an upper surface of the capping oxide structure.