US 12,113,084 B2
Image sensor
Taesub Jung, Hwaseong-si (KR); Kyungho Lee, Suwon-si (KR); Masato Fujita, Hwaseong-si (KR); Doosik Seol, Seoul (KR); and Kyungduck Lee, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 16, 2021, as Appl. No. 17/477,232.
Claims priority of application No. 10-2020-0128276 (KR), filed on Oct. 5, 2020.
Prior Publication US 2022/0109015 A1, Apr. 7, 2022
Int. Cl. H01L 27/146 (2006.01); H01L 27/148 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14831 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor comprising:
a first pixel region and a second pixel region located within a semiconductor substrate, wherein each of the first pixel region and the second pixel region include a photoelectric conversion device;
a first isolation layer entirely surrounding the first pixel region and the second pixel region;
a second isolation layer located between the first pixel region and the second pixel region; and
a microlens arranged on the first pixel region and the second pixel region,
wherein the second isolation layer comprises at least one first open region that exposes a portion of an area located between the first pixel region and the second pixel region.