US 12,113,077 B2
Polishing slurry, method for manufacturing a display device using the same and display device
Joon-Hwa Bae, Suwon-si (KR); Jin Hyung Park, Yongin-si (KR); Bonggu Kang, Seoul (KR); Seungbae Kang, Suwon-si (KR); Heesung Yang, Seoul (KR); Woojin Cho, Yongin-si (KR); and Byoung Kwon Choo, Hwaseong-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD.; and UBMATERIALS LNC., Yongin-si (KR)
Filed by Samsung Display Co., LTD., Yongin-si (KR); and UBmaterials Inc., Yongin-si (KR)
Filed on Jul. 13, 2020, as Appl. No. 16/927,327.
Claims priority of application No. 10-2019-0095524 (KR), filed on Aug. 6, 2019.
Prior Publication US 2021/0043661 A1, Feb. 11, 2021
Int. Cl. H01L 27/12 (2006.01); C09G 1/02 (2006.01); C09K 3/14 (2006.01); H01L 21/3105 (2006.01)
CPC H01L 27/1251 (2013.01) [C09G 1/02 (2013.01); C09K 3/1409 (2013.01); H01L 21/31053 (2013.01); H01L 27/1229 (2013.01); H01L 27/1248 (2013.01); H01L 27/1259 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A polishing slurry comprising:
about 0.01 wt % to about 10 wt % of polishing particles;
about 0.005 wt % to about 0.1 wt % of a dispersing agent including a polyethylene oxide/polypropylene oxide copolymer;
about 0.001 wt % to about 1 wt % of an oxide-polishing promoter including picolinic acid;
about 0.05 wt % to about 0.1 wt % of a nitride-polishing inhibitor; and
water, wherein
the nitride-polishing inhibitor includes glutamic acid,
a pH of the polishing slurry is about 2 to about 4, and
a polishing selectivity of the polishing slurry for silicon oxide to silicon nitride is at least about 70:1.