US 12,113,067 B2
Forming N-type and P-type horizontal gate-all-around devices
Ruilong Xie, Niskayuna, NY (US); Kangguo Cheng, Schenectady, NY (US); Juntao Li, Cohoes, NY (US); and Carl Radens, LaGrangeville, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Sep. 13, 2021, as Appl. No. 17/472,759.
Prior Publication US 2023/0079751 A1, Mar. 16, 2023
Int. Cl. H01L 21/82 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01)
CPC H01L 27/092 (2013.01) [H01L 21/823807 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a first device with a first plurality of channels with a larger horizontal dimension than a vertical dimension of the first plurality of channels; and
a second device comprising a second plurality of channels with a smaller horizontal dimension than a vertical dimension of the second plurality of channels, wherein:
the vertical dimension of the second plurality of channels is greater than the vertical dimension of the first plurality of channels; and
the first plurality of channels and the second plurality of channels are stacked according to an equal number of channels.