US 12,113,065 B2
Fin-based field effect transistor (finFET) device with enhanced on-resistance and breakdown voltage
Qing Liu, Irvine, CA (US)
Assigned to Avago Technologies Internationa! Sales Pte. Limited, Singapore (SG)
Filed by Avago Technologies International Sales Pte. Limited, Singapore (SG)
Filed on Sep. 21, 2021, as Appl. No. 17/481,204.
Prior Publication US 2023/0088066 A1, Mar. 23, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01)
CPC H01L 27/0886 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 29/0847 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A fin-based field effect transistor (finFET) device, comprising:
a fin structure comprising a first portion, a second portion, a third portion, a fourth portion and a fifth portion;
a first gate structure disposed over at least part of the first portion and a second gate structure disposed over at least part of the fifth portion;
a first source/drain region disposed in the first portion;
a second drain/source region disposed in the third portion; and
a third source/drain region disposed in the fifth portion;
wherein:
each of the first, second and third portions comprises one or more fin portions; and
a total number of fin portions in the second portion is fewer than a total number of fin portions in the first portion and a total number of fin portions in the fourth portion is fewer than a total number of fin portions in the fifth portion.