CPC H01L 25/0652 (2013.01) [H01L 24/17 (2013.01); H01L 24/24 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 2224/1703 (2013.01); H01L 2224/17135 (2013.01); H01L 2224/17136 (2013.01); H01L 2224/17177 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/24146 (2013.01); H01L 2224/73259 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06548 (2013.01)] | 13 Claims |
1. A microelectronic assembly, comprising:
a package substrate;
a first insulating material layer above the package substrate, the first insulating material layer having a first lateral width;
a first die in the first insulating material layer, the first die having a top side opposite a bottom side, and a first sidewall and a second sidewall between the top side and the bottom side, the second sidewall laterally opposite the first sidewall;
a first interconnect in the first insulating material layer, the first interconnect laterally spaced apart from the first sidewall of the first die;
a second interconnect in the first insulating material layer, the second interconnect laterally spaced apart from the second sidewall of the first die;
a redistribution layer over the first insulating material and over the first die, the redistribution layer coupled to the first interconnect, the redistribution layer coupled to the first die, the redistribution layer coupled to the second interconnect, and the redistribution layer having a second lateral width the same as the first lateral width;
a second insulating material layer over the redistribution layer, the second insulating material layer having a third lateral width, the third lateral width the same as the second lateral width;
a second die coupled to the redistribution layer, wherein the second insulating material layer surrounds and extends beyond the second die; and
a third die coupled to the redistribution layer, the third die laterally spaced apart from the second die, wherein the second insulating material layer surrounds and extends beyond the third die.
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