US 12,113,044 B2
Semiconductor package and manufacturing method thereof
Shan-Bo Wang, Kaohsiung (TW); Chin-Li Kao, Kaohsiung (TW); and An-Hsuan Hsu, Kaohsiung (TW)
Assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung (TW)
Filed by Advanced Semiconductor Engineering, Inc., Kaohsiung (TW)
Filed on Feb. 18, 2022, as Appl. No. 17/676,094.
Prior Publication US 2023/0268314 A1, Aug. 24, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 25/10 (2006.01); H01L 23/498 (2006.01)
CPC H01L 24/81 (2013.01) [H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 25/105 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/13105 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13582 (2013.01); H01L 2224/13605 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/13647 (2013.01); H01L 2224/14505 (2013.01); H01L 2224/16157 (2013.01); H01L 2224/16167 (2013.01); H01L 2224/16506 (2013.01); H01L 2224/17505 (2013.01); H01L 2224/81097 (2013.01); H01L 2224/81211 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/81825 (2013.01); H01L 2224/81935 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An electrical device structure, comprising:
a first package component; and
an electrically conductive interconnector structure electrically connected to the first package component, comprising:
a first conductive pad on the first package component, a first alloy layer, and a solder layer, wherein the first alloy layer comprises a first conductive elemental material with a melting point less than a melting point of the solder layer, and the first alloy layer is closer to the first conductive pad than the solder layer is.