US 12,113,040 B2
Semiconductor device
Tomoyuki Asada, Tokyo (JP); Eri Fukuda, Tokyo (JP); and Daisuke Tsunami, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Appl. No. 17/607,359
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Aug. 27, 2019, PCT No. PCT/JP2019/033462
§ 371(c)(1), (2) Date Oct. 28, 2021,
PCT Pub. No. WO2021/038712, PCT Pub. Date Mar. 4, 2021.
Prior Publication US 2022/0223558 A1, Jul. 14, 2022
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/32 (2013.01) [H01L 2224/32225 (2013.01); H01L 2924/1011 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a support;
a semiconductor chip provided on the support; and
a die bond material for bonding a back surface of the semiconductor chip to the support,
wherein a plurality of cutouts is formed at edges formed between the back surface and side surfaces of the semiconductor chip connected to the back surface,
the die bond material is one continuous piece over the plurality of cutouts, and
each of the plurality of cutouts passes through the semiconductor chip from the back surface to an upper surface opposite to the back surface.