US 12,113,038 B2
Thermal compression flip chip bump for high performance and fine pitch
Dongming He, San Diego, CA (US); Hung-Yuan Hsu, Taichung (TW); Yangyang Sun, San Diego, CA (US); Wei Hu, San Diego, CA (US); Wei Wang, San Diego, CA (US); and Lily Zhao, San Diego, CA (US)
Assigned to QUALCOMM Incorporated, San Diego, CA (US)
Filed by QUALCOMM Incorporated, San Diego, CA (US)
Filed on Sep. 21, 2020, as Appl. No. 17/027,316.
Claims priority of provisional application 62/956,991, filed on Jan. 3, 2020.
Prior Publication US 2021/0210449 A1, Jul. 8, 2021
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/13 (2013.01) [H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 2224/13027 (2013.01); H01L 2924/35 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A flip chip connection comprising:
a substrate formed from silicon (Si);
a metal pad in direct contact with a contact side of the substrate;
a first passivation layer in direct contact with the contact side of the substrate, wherein the first passivation layer at least partially overlaps the metal pad;
a first metal layer on a contact side of the metal pad;
a metallization structure on a contact side of the first metal layer, the metallization structure comprising a redistribution layer (RDL); and
a contact structure on a contact side of the metallization structure, the contact structure comprising a copper pillar and a solder portion,
wherein widths of the copper pillar and the solder portion are equal.