US 12,113,029 B2
Semiconductor device and manufacturing method thereof
Tatsuto Nishihara, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Appl. No. 17/434,589
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Apr. 5, 2019, PCT No. PCT/JP2019/015156
§ 371(c)(1), (2) Date Aug. 27, 2021,
PCT Pub. No. WO2020/202556, PCT Pub. Date Oct. 8, 2020.
Prior Publication US 2022/0139844 A1, May 5, 2022
Int. Cl. H01L 23/552 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/552 (2013.01) [H01L 21/4853 (2013.01); H01L 21/565 (2013.01); H01L 23/295 (2013.01); H01L 23/3121 (2013.01); H01L 23/3135 (2013.01); H01L 23/49838 (2013.01); H01L 24/48 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/3025 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor chip bonded to a surface of a substrate;
bonding wires connecting the semiconductor chip to bond pads formed on the surface of the substrate;
a grounded pad formed so as to surround the semiconductor chip and the bond pads;
a basket-shaped wire mesh covering the semiconductor chip, the bonding wires, and the bond pads and joined to the grounded pad;
a first molded resin containing first fillers having particle sizes smaller than an opening size of the wire mesh and sealing, inside of the wire mesh, the semiconductor chip, the bonding wires, and the bond pads; and
a second molded resin containing second fillers having particle sizes larger than the opening size of the wire mesh and sealing, outside the wire mesh and via the first molded resin and the wire mesh, the semiconductor chip, the bonding wires, and the bond pads.