US 12,113,019 B2
Memory devices including strings of memory cells, and related electronic systems
John D. Hopkins, Meridian, ID (US); Jordan D. Greenlee, Boise, ID (US); and Marko Milojevic, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Dec. 30, 2022, as Appl. No. 18/148,662.
Application 18/148,662 is a division of application No. 16/990,518, filed on Aug. 11, 2020, granted, now 11,574,870.
Prior Publication US 2023/0148107 A1, May 11, 2023
Int. Cl. H01L 23/522 (2006.01); H01L 21/762 (2006.01); H01L 23/532 (2006.01); H01L 27/146 (2006.01); H04N 21/21 (2011.01); H04N 21/422 (2011.01); H10B 41/27 (2023.01); H10B 41/30 (2023.01); H10B 41/35 (2023.01); H10N 70/00 (2023.01)
CPC H01L 23/53209 (2013.01) [H01L 21/76264 (2013.01); H01L 23/5226 (2013.01); H01L 27/14636 (2013.01); H04N 21/21 (2013.01); H04N 21/4222 (2013.01); H10B 41/27 (2023.02); H10B 41/30 (2023.02); H10B 41/35 (2023.02); H10N 70/826 (2023.02); H01H 2231/002 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A memory device, comprising:
vertically extending strings of memory cells;
access lines in electrical communication with the vertically extending strings of memory cells and extending in a first horizontal direction;
data lines in electrical communication with the vertically extending strings of memory cells and extending in a second horizontal direction, substantially transverse to the first horizontal direction, the data lines comprising a single-phase material comprising ruthenium or molybdenum;
interconnect structures vertically interposed between and in electrical communication with the data lines and the vertically extending strings of memory cells, the interconnect structures under and in direct physical contact with the data lines, at least one side surface of the data lines vertically aligned with a side surface of the interconnect structures, and the interconnect structures comprising an alpha-phase tungsten fill material and a beta-phase tungsten liner material laterally adjacent to the alpha-phase tungsten fill material; and
contact structures vertically interposed between and in electrical communication with the interconnect structures and the vertically extending strings of memory cells, the contact structures comprising tungsten.