US 12,113,009 B2
Semiconductor device
Koshun Saito, Kyoto (JP); and Yasufumi Matsuoka, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP)
Filed by Rohm Co., Ltd., Kyoto (JP)
Filed on Aug. 23, 2023, as Appl. No. 18/454,582.
Application 18/454,582 is a continuation of application No. 18/164,410, filed on Feb. 3, 2023, granted, now 11,776,891.
Application 18/164,410 is a continuation of application No. 17/643,979, filed on Dec. 13, 2021, granted, now 11,600,561.
Application 17/643,979 is a continuation of application No. 16/573,244, filed on Sep. 17, 2019, granted, now 11,227,827.
Claims priority of application No. 2018-174816 (JP), filed on Sep. 19, 2018.
Prior Publication US 2023/0395483 A1, Dec. 7, 2023
Int. Cl. H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 25/07 (2006.01)
CPC H01L 23/49844 (2013.01) [H01L 23/3121 (2013.01); H01L 24/49 (2013.01); H01L 25/072 (2013.01); H01L 2924/13091 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a metal-oxide semiconductor field-effect transistor (MOSFET) semiconductor element provided with a first electrode, a second electrode, and a third electrode;
a first lead that includes a mounting portion on which the MOSFET semiconductor element is mounted, the mounting portion includes a mounting-portion front surface and a mounting-portion back surface that are opposite to each other in a thickness direction, the MOSFET semiconductor element being mounted on the mounting-portion front surface;
a second lead disposed on one side of the first lead as viewed in plan with respect to the mounting-portion front surface, the second lead comprising three terminal portions that extend away from the first lead to an external edge of the semiconductor device;
a third lead disposed on the one side of the first lead, and under a condition the one side of the first lead is above the second lead and the third lead as viewed in plan, the second lead is disposed on a right side of the third lead;
a sealing resin that covers the MOSFET semiconductor element and respective portions of the first lead, the second lead and the third lead, the sealing resin includes a resin front surface, a resin back surface and a resin side surface, the resin front surface and the resin back surface being opposite to each other in a thickness direction, the resin side surface connects the resin front surface and the resin back surface, and
a plurality of bonding wires, wherein
the mounting-portion back surface is flush with the resin back surface, and includes a portion that is exposed from the sealing resin,
bottom surfaces of the three terminal portions of the second lead are substantially flush with at least the portion of the mounting-portion back surface that is exposed from the sealing resin, and at least portions of the bottom surfaces and end surfaces of the three terminal portions are exposed from the sealing resin,
a bottom surface of the third lead is substantially flush with at least the portion of the mounting-portion back surface that is exposed from the sealing resin, and at least the bottom surface and an end surface of the third lead is also exposed from the sealing resin,
the plurality of bonding wires electrically connect the second electrode of the MOSFET semiconductor element to the second lead, wherein the sealing resin covers all of each of the plurality of bonding wires, and the plurality of bonding wires extend in a common direction perpendicular to the thickness direction.