US 12,113,005 B2
Packages with Si-substrate-free interposer and method forming same
Ming-Fa Chen, Taichung (TW); and Chen-Hua Yu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 20, 2023, as Appl. No. 18/186,525.
Application 18/186,525 is a continuation of application No. 17/106,744, filed on Nov. 30, 2020, granted, now 11,610,858.
Application 17/106,744 is a continuation of application No. 15/647,704, filed on Jul. 12, 2017, granted, now 10,854,568, issued on Dec. 1, 2020.
Claims priority of provisional application 62/483,256, filed on Apr. 7, 2017.
Prior Publication US 2023/0230909 A1, Jul. 20, 2023
Int. Cl. H01L 23/498 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/49822 (2013.01) [H01L 21/76805 (2013.01); H01L 21/76807 (2013.01); H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 24/05 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/80895 (2013.01); H01L 2225/06544 (2013.01); H01L 2924/0695 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package comprising:
a redistribution structure comprising:
a first plurality of dielectric layers;
a plurality of redistribution lines extending into the first plurality of dielectric layers, wherein each of the plurality of redistribution lines comprises a metal trace and a metal via over and continuously joined to the metal trace, and wherein the metal via has upper portions narrower than respective lower portions;
a second plurality of dielectric layers over the first plurality of dielectric layers; and
a plurality of metal lines and plurality of metal vias, wherein each of the plurality of metal lines and a corresponding underlying one of the plurality of metal vias are in a same dielectric layer of the second plurality of dielectric layers, and wherein top surfaces of the plurality of metal lines are coplanar with top surfaces of the respective ones of the second plurality of dielectric layers; and
a first device die over and bonded to the redistribution structure.