US 12,112,993 B2
Heat radiation member
Ryota Matsugi, Osaka (JP); Isao Iwayama, Osaka (JP); Chieko Tanaka, Toyama (JP); and Hideaki Morigami, Toyama (JP)
Assigned to A.L.M.T. CORP., Tokyo (JP)
Appl. No. 17/289,259
Filed by A.L.M.T. Corp., Tokyo (JP)
PCT Filed Aug. 30, 2019, PCT No. PCT/JP2019/034154
§ 371(c)(1), (2) Date Apr. 28, 2021,
PCT Pub. No. WO2020/090213, PCT Pub. Date May 7, 2020.
Claims priority of application No. 2018-206163 (JP), filed on Oct. 31, 2018.
Prior Publication US 2021/0398877 A1, Dec. 23, 2021
Int. Cl. H01L 23/373 (2006.01); B23K 1/00 (2006.01); B23K 35/32 (2006.01); B23K 101/40 (2006.01); B23K 103/00 (2006.01); B23K 103/16 (2006.01)
CPC H01L 23/3732 (2013.01) [B23K 1/0016 (2013.01); B23K 35/325 (2013.01); H01L 23/3736 (2013.01); B23K 2101/40 (2018.08); B23K 2103/172 (2018.08); B23K 2103/56 (2018.08)] 4 Claims
OG exemplary drawing
 
1. A heat radiation member for a semiconductor element comprising:
a substrate composed of a composite material containing diamond and a metallic phase;
an insulating plate provided on a surface of the substrate and composed of aluminum nitride; and
a single bonding layer formed on the surface of the substrate, interposed between the substrate and the insulating plate,
wherein a constituent metal of the metallic phase is pure silver or a silver-based alloy,
the bonding layer is composed of an alloy containing Ag, Cu, and Ti, and
a concentration of the Ti in the bonding layer is not lower than 40 atomic % and not higher than 95 atomic % with a total amount of Ag, Cu, and Ti being defined as 100 atomic %.