US 12,112,992 B2
Package having an electronic component and an encapsulant encapsulating a dielectric layer and a semiconductor die of the electronic component
Daniel Porwol, Straubing (DE); Thomas Fischer, Regensburg (DE); Uwe Seidel, Munich (DE); and Anton Steltenpohl, Munich (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Feb. 9, 2023, as Appl. No. 18/107,800.
Application 18/107,800 is a continuation of application No. 17/237,143, filed on Apr. 22, 2021, granted, now 11,605,572.
Claims priority of application No. 102020110896.6 (DE), filed on Apr. 22, 2020.
Prior Publication US 2023/0187298 A1, Jun. 15, 2023
Int. Cl. H01L 23/31 (2006.01); H01L 21/683 (2006.01); H01L 23/29 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/3164 (2013.01) [H01L 23/3121 (2013.01); H01L 23/3135 (2013.01); H01L 23/3192 (2013.01); H01L 21/6836 (2013.01); H01L 23/295 (2013.01); H01L 24/02 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68368 (2013.01); H01L 2224/02377 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2924/10252 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10254 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10335 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package, comprising:
an electronic component that includes a dielectric layer as a base and a semiconductor die attached on top of the dielectric layer, the semiconductor die having an active area with monolithically integrated circuit elements; and
an encapsulant encapsulating the dielectric layer and the semiconductor die,
wherein the encapsulant is a mold compound having different material properties than the dielectric layer, and
wherein the electronic component further includes an adhesive layer that further promotes adhesion between the dielectric layer and the semiconductor die.