	US 12,112,989 B2
	Semiconductor device with tunable epitaxy structures and method of forming the same
Shih-Hao Lin, Hsinchu (TW); Tzu-Hsiang Hsu, Hsinchu County (TW); Chong-De Lien, Hsinchu (TW); Szu-Chi Yang, Hsinchu (TW); Hsin-Wen Su, Hsinchu (TW); and Chih-Hsiang Huang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 26, 2022, as Appl. No. 17/815,085.
Application 17/815,085 is a division of application No. 16/938,340, filed on Jul. 24, 2020, granted, now 11,581,226.
Claims priority of provisional application 62/907,368, filed on Sep. 27, 2019.
Prior Publication US 2022/0359308 A1, Nov. 10, 2022
Int. Cl. H01L 21/8238 (2006.01); H01L 21/306 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10B 10/00 (2023.01)

CPC H01L 21/823814 (2013.01) [H01L 21/30604 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/42392 (2013.01); H01L 29/6656 (2013.01); H01L 29/7848 (2013.01); H10B 10/12 (2023.02)]

20 Claims

1. A device comprising:

a first fin and a second fin;

a first gate structure disposed on the first fin and a second gate structure disposed on the second fin;

a first source/drain feature extending within the first fin to a first depth, the first source/drain feature including a first epitaxial layer and a second epitaxial layer disposed on the first epitaxial layer; and

a second source/drain feature extending within the second fin to a second depth that is different than the first depth, the second source/drain feature including a third epitaxial layer and a fourth epitaxial layer disposed on the third epitaxial layer, wherein a first ratio of a height of the first epitaxial layer to the first depth of the first source/drain is greater than a second ratio of a height of the third epitaxial layer to the second depth of the second source/drain feature, wherein the second depth is greater than the first depth.