| CPC H01L 21/823431 (2013.01) [H01L 21/3065 (2013.01); H01L 21/3083 (2013.01); H01L 21/823418 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/785 (2013.01)] | 20 Claims |
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1. A method of forming a semiconductor device, the method comprising:
forming a semiconductor structure over a substrate;
forming a dummy structure over the semiconductor structure;
forming a gate spacer on a sidewall of the dummy structure;
performing a first etching process on the semiconductor structure adjacent the dummy structure;
performing a second etching process on the semiconductor structure to form a reshaped semiconductor structure, wherein a first end of the reshaped semiconductor structure is a convex sidewall in a plan view when viewed from above the dummy structure; and
epitaxially growing a source/drain region adjacent ends of the reshaped semiconductor structure.
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