US 12,112,985 B2
Semiconductor substrate
Chih-Yuan Chuang, Hsinchu (TW); and Walter Tony Wohlmuth, Hsinchu (TW)
Assigned to GlobalWafers Co., Ltd., Hsinchu (TW)
Filed by GlobalWafers Co., Ltd., Hsinchu (TW)
Filed on Nov. 27, 2023, as Appl. No. 18/520,518.
Application 18/520,518 is a division of application No. 17/458,564, filed on Aug. 27, 2021, granted, now 11,887,893.
Claims priority of application No. 109134514 (TW), filed on Oct. 6, 2020.
Prior Publication US 2024/0105512 A1, Mar. 28, 2024
Int. Cl. H01L 29/34 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/78 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/267 (2006.01)
CPC H01L 21/7806 (2013.01) [H01L 21/02447 (2013.01); H01L 21/02529 (2013.01); H01L 21/0254 (2013.01); H01L 21/76254 (2013.01); H01L 29/045 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/267 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor substrate, comprising:
a high-resistivity silicon carbide layer comprising a first surface and a second surface opposite to the first surface; and
a gallium nitride epitaxial layer formed on the second surface of the high-resistivity silicon carbide layer, wherein a thickness of the gallium nitride epitaxial layer is less than 2 μm, and a full width at half maximum (FWHM) of an X-ray diffraction analysis (002) plane is less than 100 arcsec, and
a thickness of the high-resistivity silicon carbide layer ranges from 20 μm to 50 μm, the second surface of the high-resistivity silicon carbide layer has an angle ranging from 0° to +/−8° with respect to a (0001) plane, a micropipe density (MPD) of the high-resistivity silicon carbide layer is less than 0.5 ea/cm2, basal plane dislocation (BPD) of the high-resistivity silicon carbide layer is less than 10 ea/cm2, and threading screw dislocation (TSD) of the high-resistivity silicon carbide layer is less than 500 ea/cm2.
 
10. A semiconductor substrate, comprising:
an N-type silicon carbide (N—SiC) layer; and
a gallium nitride epitaxial layer formed on a surface of the N-type silicon carbide (N—SiC) layer, wherein a thickness of the gallium nitride epitaxial layer ranges from 0.3 μm to 6 μm, and a full width at half maximum (FWHM) of an X-ray diffraction analysis (002) plane is less than 100 arcsec, and
a thickness of the N-type silicon carbide (N—SiC) layer ranges from 0.1 μm to 50 μm, and the surface of the N-type silicon carbide (N—SiC) layer comprises an angle ranging from 0° to +/−8° with respect to a (0001) plane, a micropipe density (MPD) of the N-type silicon carbide (N—SiC) layer is less than 0.5 ea/cm2, basal plane dislocation (BPD) of the N-type silicon carbide (N—SiC) layer is less than 10 ea/cm2, and threading screw dislocation (TSD) of the N-type silicon carbide (N—SiC) layer is less than 500 ea/cm2.