US 12,112,983 B2
Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device
Timothy E. Boles, Tyngsboro, MA (US); Wayne Mack Struble, Franklin, MA (US); and Gabriel R. Cueva, Bedford, NH (US)
Assigned to MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC., Lowell, MA (US)
Filed by MACOM Technology Solutions Holdings, Inc., Lowell, MA (US)
Filed on Aug. 26, 2020, as Appl. No. 17/003,616.
Prior Publication US 2022/0068708 A1, Mar. 3, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/532 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01)
CPC H01L 21/76841 (2013.01) [H01L 21/823437 (2013.01); H01L 23/53223 (2013.01); H01L 29/2003 (2013.01); H01L 29/42372 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of manufacturing an electrode structure for a device, comprising:
forming an insulating layer over a surface of a substrate;
forming an opening in the insulating layer to expose a semiconductor material surface region of the substrate through the opening;
depositing a barrier metal layer over the insulating layer and onto the semiconductor material surface region of the substrate through the opening in the insulating layer using atomic layer deposition;
depositing a conducting metal layer over the barrier metal layer;
depositing a cap metal layer over the conducting metal layer using sputtering;
forming a cap etch photoresist layer over a region of the cap metal layer; and
etching the cap metal layer, the conducting metal layer, and the barrier metal layer down to the insulating layer over an area outside of the cap etch photoresist layer.