CPC H01L 21/68785 (2013.01) [C23C 16/4584 (2013.01); C23C 16/4586 (2013.01); C23C 16/463 (2013.01); C23C 16/505 (2013.01); H01J 37/32091 (2013.01); H01J 37/32724 (2013.01); H01J 37/32899 (2013.01); H01L 21/6833 (2013.01); H01L 21/68792 (2013.01); C23C 16/45565 (2013.01); H01J 37/32183 (2013.01); H01J 37/32568 (2013.01); H01J 37/32642 (2013.01); H01J 37/32706 (2013.01)] | 18 Claims |
1. A substrate support for use in a chemical vapor deposition (CVD) chamber, comprising:
a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body;
a rotary union coupled to the pedestal, wherein the rotary union includes a stationary housing disposed about a rotor;
a drive assembly coupled to the rotary union and configured to rotate the rotor to rotate the pedestal;
a coolant union coupled to the rotary union and having a coolant inlet fluidly coupled to coolant channels disposed in the pedestal via a coolant line;
an RF rotary joint coupled to the coolant union and having a RF connector configured to couple the pedestal to an RF bias power source, wherein the RF connector includes an upper portion and a lower portion, the lower portion disposed below the upper portion and configured to rotate with respect to the upper portion;
an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body to provide RF bias to the pedestal, wherein the RF conduit is disposed above the upper portion of the RF connector and in vertical alignment with the upper portion of the RF connector and the lower portion of the RF connector;
an insulator tube disposed about the RF conduit, wherein portions of the insulator tube disposed in the dielectric plate is wider than portions of the insulator tube disposed in the pedestal body; and
a ground tube disposed about the insulator tube and extending from the RF rotary joint to the rotary union, wherein the insulator tube extends vertically above an upper surface of the ground tube.
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