US 12,112,969 B2
Apparatus and methods for wafer chucking on a susceptor for ALD
Joseph Yudovsky, Campbell, CA (US); and Kaushal Gangakhedkar, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Aug. 16, 2021, as Appl. No. 17/403,756.
Application 17/403,756 is a division of application No. 15/927,066, filed on Mar. 20, 2018, granted, now 11,094,577.
Application 17/403,756 is a division of application No. 14/773,005, granted, now 9,922,860, previously published as PCT/US2014/028502, filed on Mar. 14, 2014.
Claims priority of provisional application 61/783,418, filed on Mar. 14, 2013.
Prior Publication US 2021/0384063 A1, Dec. 9, 2021
Int. Cl. H01L 21/683 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); C23C 16/50 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/6838 (2013.01) [C23C 16/45544 (2013.01); C23C 16/458 (2013.01); C23C 16/46 (2013.01); C23C 16/50 (2013.01); H01L 21/68735 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of processing a wafer in a processing chamber, the method comprising:
positioning a wafer in a recess in a top surface of a susceptor assembly, a central axis of the wafer offset from a central axis of the susceptor assembly, the wafer having a top surface and a bottom surface, the recess including at least one passage extending through the susceptor assembly to a bottom surface of the susceptor assembly;
passing the wafer and susceptor assembly under a gas distribution assembly comprising a plurality of substantially parallel gas channels directing flows of gases toward the top surface of the susceptor assembly;
creating a pressure differential between the top surface and bottom surface of the wafer so that the flow of gases directed toward the top surface of the wafer creates a higher pressure than the pressure at the bottom surface of the wafer, the pressure differential created within the at least one passage by a vacuum source; and
directing a valve positioned between the bottom surface of the susceptor assembly and the vacuum source to allow a flow of a gas to pass through the at least one passage to the recess to provide positive pressure on the back side of the wafer to remove the wafer from the susceptor assembly.