US 12,112,954 B2
Etching method, substrate processing apparatus, and substrate processing system
Maju Tomura, Miyagi (JP); Tomohiko Niizeki, Miyagi (JP); Takayuki Katsunuma, Miyagi (JP); Hironari Sasagawa, Miyagi (JP); Yuta Nakane, Miyagi (JP); Shinya Ishikawa, Miyagi (JP); Kenta Ono, Miyagi (JP); Sho Kumakura, Miyagi (JP); Yusuke Takino, Miyagi (JP); and Masanobu Honda, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Jan. 28, 2021, as Appl. No. 17/160,780.
Claims priority of application No. 2020-012240 (JP), filed on Jan. 29, 2020; and application No. 2020-101012 (JP), filed on Jun. 10, 2020.
Prior Publication US 2021/0233778 A1, Jul. 29, 2021
Int. Cl. H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/31144 (2013.01) [H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/32055 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An etching method, comprising:
(a) forming a film on a surface of a substrate, wherein the substrate includes layer to be etched and a mask, the mask is provided on the layer and in direct contact with the layer, the film is formed directly on a top surface of the mask so that the mask is between the film and the layer, the mask includes an opening that partially exposes the layer, the layer has an opening having a first depth, and the film is made of a same material as that of the layer; and
(b) etching the layer after the forming the film to etch the layer to a second depth deeper into the layer than the first depth.