US 12,112,949 B2
Highly etch selective amorphous carbon film
Rajesh Prasad, Gloucester, MA (US); Sarah Bobek, Sunnyvale, CA (US); Prashant Kumar Kulshreshtha, San Jose, CA (US); Kwangduk Douglas Lee, Redwood City, CA (US); Harry Whitesell, Sunnyvale, CA (US); Hidetaka Oshio, Tokyo (JP); Dong Hyung Lee, Danville, CA (US); Deven Matthew Raj Mittal, Middleton, MA (US); Scott Falk, Essex, MA (US); and Venkataramana R. Chavva, Andover, MA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Oct. 10, 2022, as Appl. No. 17/963,059.
Application 17/963,059 is a continuation of application No. 16/939,316, filed on Jul. 27, 2020, granted, now 11,469,107.
Application 16/939,316 is a continuation in part of application No. 16/188,514, filed on Nov. 13, 2018, granted, now 10,727,059, issued on Jul. 28, 2020.
Claims priority of provisional application 62/593,668, filed on Dec. 1, 2017.
Prior Publication US 2023/0029929 A1, Feb. 2, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/033 (2006.01); C23C 16/26 (2006.01); C23C 16/505 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01)
CPC H01L 21/0338 (2013.01) [C23C 16/26 (2013.01); C23C 16/505 (2013.01); C23C 16/56 (2013.01); H01L 21/02115 (2013.01); H01L 21/02274 (2013.01); H01L 21/02321 (2013.01); H01L 21/0234 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/31122 (2013.01); H01L 21/31155 (2013.01)] 29 Claims
OG exemplary drawing
 
1. A method of forming an amorphous carbon film, comprising:
depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region;
forming a doped amorphous carbon film by implanting a dopant or an inert species into the amorphous carbon film in a second processing region, wherein the dopant or the inert species is selected from carbon, boron, nitrogen, silicon, phosphorous, argon, helium, neon, krypton, xenon, beryllium, germanium, or combinations thereof, wherein a target temperature during implanting the dopant or the inert species is between about −100 degrees Celsius and about 550 degrees Celsius;
patterning the doped amorphous carbon film; and
etching the underlayer.