US 12,112,948 B2
Method of manufacturing integrated circuit device using a metal-containing photoresist composition
Chawon Koh, Yongin-si (KR); Soyeon Yoo, Hwaseong-si (KR); Sooyoung Choi, Hwaseong-si (KR); Tsunehiro Nishi, Seongnam-si (KR); Kwangsub Yoon, Yongin-si (KR); Brian Cardineau, Corvallis, OR (US); and Kumagai Tomoya, Kanagawa (JP)
Assigned to Samsung Electronics Co., Ltd., (KR); Inpria Corporation, Corvallis, OR (US); and Tokyo Ohka Kogyo Co., Ltd., Kanagawa (JP)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 18, 2020, as Appl. No. 16/996,372.
Prior Publication US 2022/0059345 A1, Feb. 24, 2022
Int. Cl. G03F 7/38 (2006.01); G03F 7/004 (2006.01); H01L 21/027 (2006.01)
CPC H01L 21/0274 (2013.01) [G03F 7/0042 (2013.01); G03F 7/38 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method of manufacturing an integrated circuit device, the method comprising:
forming a metal-containing photoresist layer by coating a metal-containing photoresist composition on a substrate comprising a main surface and an edge portion around the main surface in a plan view;
removing a portion of the metal-containing photoresist layer from the edge portion of the substrate by supplying a thinner composition to the edge portion of the substrate, the thinner composition consisting of a composition of propylene glycol methyl ether (PGME) and propylene glycol methyl ether acetate (PGMEA); and
removing impurities from a surface of the substrate by supplying a main treatment composition comprising an organic solvent, acid, and water to the substrate after the removing of the portion of the metal-containing photoresist layer,
wherein in the main treatment composition, the organic solvent includes a composition of PGME and PGMEA, and a content of water is about 10 ppm to about 5 wt % based on a total amount of the main treatment composition.