US 12,112,947 B2
Method of crystallizing amorphous silicon film and deposition apparatus
Tatsuya Miyahara, Yamanashi (JP); Daisuke Suzuki, Yamanashi (JP); Yoshihiro Takezawa, Yamanashi (JP); and Yuki Tanabe, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Mar. 17, 2022, as Appl. No. 17/655,247.
Claims priority of application No. 2021-064988 (JP), filed on Apr. 6, 2021.
Prior Publication US 2022/0319846 A1, Oct. 6, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/24 (2006.01); C23C 16/52 (2006.01); C23C 16/56 (2006.01)
CPC H01L 21/02667 (2013.01) [C23C 16/0272 (2013.01); C23C 16/24 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/0262 (2013.01); H01L 21/02645 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method of crystallizing an amorphous silicon film, comprising:
depositing the amorphous silicon film on a seed layer formed over a substrate while heating the amorphous silicon film to a first temperature;
forming a crystal nucleus in an outer layer of the amorphous silicon film by causing migration of silicon in the outer layer by heating the amorphous silicon film to a second temperature higher than the first temperature; and
after forming the crystal nucleus, annealing the amorphous silicon film at a third temperature higher than the second temperature, wherein
in the annealing, the crystal nucleus is grown from the outer layer to a bottom surface side.