US 12,112,946 B2
Deposition of highly crystalline 2D materials
Yuanyuan Shi, Leuven (BE); Benjamin Groven, Leuven (BE); and Matty Caymax, Heverlee (BE)
Assigned to IMEC VZW, Leuven (BE)
Filed by IMEC VZW, Leuven (BE)
Filed on Feb. 22, 2022, as Appl. No. 17/677,005.
Claims priority of application No. 21159840 (EP), filed on Mar. 1, 2021.
Prior Publication US 2022/0277953 A1, Sep. 1, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 21/465 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/0262 (2013.01) [H01L 21/02568 (2013.01); H01L 21/02598 (2013.01); H01L 21/02645 (2013.01); H01L 21/465 (2013.01); H01L 29/66969 (2013.01); H01L 21/0242 (2013.01); H01L 29/24 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method for providing a film of one or more monolayers of transition metal dichalcogenides on a substrate, the method comprising:
providing a substrate;
depositing at least one monolayer of the transition metal dichalcogenides on the substrate; and
selectively removing superficial islands on top of the at least one monolayer by thermal etching with Cl2 as etchant, wherein the selective removing step is performed at a temperature of at least 500° C.