CPC H01L 21/02118 (2013.01) [C23C 16/45536 (2013.01); C23C 16/52 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/76224 (2013.01)] | 18 Claims |
1. A method of top-selective deposition using an initially flowable carbon-based film on a substrate having a recess defined by a top surface, sidewall, and a bottom, comprising steps of:
(i) depositing the initially flowable carbon-based film in the recess of the substrate in a reaction space, wherein the initially flowable carbon-based film accumulates within the recess, and then stopping the deposition step, wherein after deposition is stopped, the initially flowable carbon-based film forms a carbon-based film in the recess;
(ii) exposing the carbon-based film in the recess to a nitrogen plasma in an atmosphere substantially devoid of hydrogen and oxygen so as to redeposit a portion of the carbon-based film in the recess, wherein the carbon-based film is redeposited selectively on the top surface to form a redeposited carbon-based film on the top surface, wherein the nitrogen plasma is anisotropic; and
(iii) removing a portion of the carbon-based film remaining on the bottom of the recess by plasma ashing,
wherein the plasma ashing does not remove all of the redeposited carbon-based film on the top surface; and
repeating steps (i), (ii), and (iii) to form a top-selective deposited carbon-based film.
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