CPC H01J 37/3171 (2013.01) [G21K 5/04 (2013.01); H01J 37/1475 (2013.01); H01L 21/0415 (2013.01)] | 20 Claims |
1. An ion implantation system comprising:
a mass analyzing magnet comprising a yoke and a coil defining a first entrance, a second entrance, and an exit of the mass analyzing magnet;
a first ion source configured to define a first ion beam directed toward the first entrance of the mass analyzing magnet along a first beam path;
a second ion source configured to define a second ion beam directed toward the second entrance of the mass analyzing magnet along a second beam path; and
a magnet current source configured to supply a magnet current to the mass analyzing magnet; and
magnet control circuitry coupled to the mass analyzing magnet and magnet current source, wherein the magnet control circuitry is configured to selectively control a polarity of the magnet current supplied to the mass analyzing magnet based on a selective formation of each of the first ion beam and the second ion beam, wherein the mass analyzing magnet is configured to mass analyze the first ion beam and second ion beam, respectively, thereby defining a mass analyzed ion beam at the exit of the mass analyzing magnet along a mass analyzed beam path.
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