	US 12,112,897 B2
	Methods for perovskite device processing by vapor transport deposition
Le Chen, Fremont, CA (US); David Ho, Cupertino, CA (US); Xiaoping Li, San Jose, CA (US); Rick Powell, Ann Arbor, MI (US); Tze-Bin Song, Fremont, CA (US); Vera Steinmann, Menlo Park, CA (US); Aravamuthan Varadarajan, Fremont, CA (US); Dirk Weiss, Corvallis, OR (US); Gang Xiong, Santa Clara, CA (US); and Zhibo Zhao, Novi, MI (US)
Assigned to First Solar, Inc., Tempe, AZ (US)
Appl. No. 17/801,093
Filed by First Solar, Inc., Tempe, AZ (US)
PCT Filed Feb. 19, 2021, PCT No. PCT/US2021/018666 § 371(c)(1), (2) Date Aug. 19, 2022, PCT Pub. No. WO2021/168175, PCT Pub. Date Aug. 26, 2021.
Claims priority of provisional application 62/978,760, filed on Feb. 19, 2020.
Prior Publication US 2023/0082682 A1, Mar. 16, 2023
Int. Cl. H01G 9/00 (2006.01); C23C 14/06 (2006.01); C23C 14/22 (2006.01); C23C 14/50 (2006.01); C23C 14/58 (2006.01); H01G 9/20 (2006.01); H10K 30/30 (2023.01); H10K 30/40 (2023.01); H10K 30/82 (2023.01); H10K 71/16 (2023.01); H10K 85/30 (2023.01)

CPC H01G 9/0036 (2013.01) [C23C 14/0694 (2013.01); C23C 14/228 (2013.01); C23C 14/50 (2013.01); C23C 14/5806 (2013.01); H01G 9/2009 (2013.01); H10K 30/30 (2023.02); H10K 30/40 (2023.02); H10K 30/82 (2023.02); H10K 71/164 (2023.02); H10K 85/30 (2023.02)]

12 Claims

1. A method of forming a perovskite precursor layer comprising:

providing a substrate stack in a deposition chamber, the substrate stack having a first charge transport layer on an electrode;

depositing a first perovskite-forming composition on the substrate stack in the deposition chamber by a vapor transport deposition (VTD) process, comprising:

heating a source material to a temperature in a range of 375° C. to 550° C., wherein the source material comprises at least one of: lead iodide (PbI₂), lead bromide (PbBr₂), cesium bromide (CsBr), cesium lead iodide (CsPbI₃), cesium tin iodide (CsSnI₃), lead chloride (PbCl₂), tin iodide (SnI₂), tin bromide (SnBr₂), or tin chloride (SnCl₂);

providing a vapor curtain to direct vapor of the source material using a carrier gas toward the substrate stack in the deposition chamber, wherein the vapor curtain has a width greater than 1 meter, the deposition chamber having a pressure in a range of 0.1 to 2.0 Torr; and

forming the precursor layer, at a deposition rate in a range of 0.01 to 1.50 μm per minute, to a thickness of 100-2000 nm, wherein the precursor layer comprises a plurality of metal halide crystal grain structures, wherein: the grain structures have a height, normal to the surface of the substrate stack, and a width, parallel to the surface of the substrate stack, and an average grain width is less than a third of an average grain height.