US 12,112,827 B2
Memory device and method for calibrating the device and fabricating the device
Joo Hwan Kim, Seoul (KR); Jun Young Park, Seongnam-si (KR); Jin Do Byun, Suwon-si (KR); Kwang Seob Shin, Anyang-si (KR); Eun Seok Shin, Seoul (KR); Hyun-Yoon Cho, Uiwang-si (KR); Young Don Choi, Seoul (KR); and Jung Hwan Choi, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 29, 2022, as Appl. No. 17/852,664.
Claims priority of application No. 10-2021-0151198 (KR), filed on Nov. 5, 2021.
Prior Publication US 2023/0143365 A1, May 11, 2023
Int. Cl. G11C 7/10 (2006.01); H03K 19/00 (2006.01)
CPC G11C 7/1048 (2013.01) [G11C 2207/2254 (2013.01); H03K 19/0005 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for calibrating a memory device, comprising:
measuring a linearity of a first pull-up circuit, a second pull-up circuit, a third pull-up circuit, a first pull-down circuit, a second pull-down circuit and a third pull-down circuit using an initial pull-up code and an initial pull-down code to obtain a measurement result, each of the first pull-up circuit, the second pull-up circuit and the third pull-up circuit having a respective resistance value determined based on a respective pull-up code, and each of the first pull-down circuit, the second pull-down circuit and the third pull-down circuit having a respective resistance value determined based on a respective pull-down code; and
determining a calibration setting indicator based on the measurement result, the calibration setting indicator indicating a calibration method of a transmission driver including the first pull-up circuit, the second pull-up circuit, the third pull-up circuit, the first pull-down circuit, the second pull-down circuit and the third pull-down circuit.