US 12,112,821 B2
Read destructive memory wear leveling system
Jon D. Trantham, Chanhassen, MN (US); Praveen Viraraghavan, Chicago, IL (US); John W. Dykes, Eden Prairie, MN (US); Ian J. Gilbert, Chanhassen, MN (US); Sangita Shreedharan Kalarickal, Eden Prairie, MN (US); Matthew J. Totin, Excelsior, MN (US); Mohamad El-Batal, Superior, CO (US); and Darshana H. Mehta, Shakopee, MN (US)
Assigned to SEAGATE TECHNOLOGY LLC, Fremont, CA (US)
Filed by Seagate Technology LLC, Fremont, CA (US)
Filed on Jun. 21, 2022, as Appl. No. 17/845,643.
Claims priority of provisional application 63/213,892, filed on Jun. 23, 2021.
Claims priority of provisional application 63/213,250, filed on Jun. 22, 2021.
Claims priority of provisional application 63/213,252, filed on Jun. 22, 2021.
Claims priority of provisional application 63/212,865, filed on Jun. 21, 2021.
Prior Publication US 2022/0406396 A1, Dec. 22, 2022
Int. Cl. G11C 29/44 (2006.01); G11C 16/34 (2006.01); G11C 29/12 (2006.01); G11C 29/46 (2006.01)
CPC G11C 29/4401 (2013.01) [G11C 16/3495 (2013.01); G11C 29/1201 (2013.01); G11C 29/46 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
generating a leveling strategy with a wear module connected to an array of ferroelectric memory cells, the leveling strategy prescribing a plurality of memory cell operating parameter deviations associated with different amounts of cell wear;
monitoring activity of a memory cell of the array of ferroelectric memory cells with the wear module;
detecting an amount of wear in the memory cell as a result of the monitored activity; and
changing a default set of operating parameters for the memory cell using the prescribed memory cell operating parameter deviations to a first stage of operating parameters, as prescribed by the leveling strategy, in response to the detected amount of wear.